Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb
- Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
- Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom)
- Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States)
- Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)
Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.
- OSTI ID:
- 22402448
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 20; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ANTIMONY ALLOYS
ARSENIC
CRYSTAL LATTICES
CURRENT DENSITY
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
INDIUM ALLOYS
INFRARED SPECTRA
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ANTIMONY ALLOYS
ARSENIC
CRYSTAL LATTICES
CURRENT DENSITY
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
INDIUM ALLOYS
INFRARED SPECTRA
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K