skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4921468· OSTI ID:22402448
; ;  [1];  [2]; ;  [3];  [2]; ;  [4]
  1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  2. Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom)
  3. Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States)
  4. Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

OSTI ID:
22402448
Journal Information:
Applied Physics Letters, Vol. 106, Issue 20; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English