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Title: Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting

We report a cost-effective approach to the fabrication of GaN based nanoporous structure for applications in renewable hydrogen production. Photoelectrochemical etching in a KOH solution has been employed to fabricate both GaN and InGaN/GaN nanoporous structures with pore sizes ranging from 25 to 60 nm, obtained by controlling both etchant concentration and applied voltage. Compared to as-grown planar devices the nanoporous structures have exhibited a significant increase of photocurrent with a factor of up to four times. An incident photon conversion efficiency of up to 46% around the band edge of GaN has been achieved.
Authors:
; ;  [1]
  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
Publication Date:
OSTI Identifier:
22402444
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; ETCHING; GALLIUM NITRIDES; HYDROGEN PRODUCTION; INDIUM COMPOUNDS; MATHEMATICAL SOLUTIONS; NANOSTRUCTURES; PHOTONS; POTASSIUM HYDROXIDES