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Title: Materials selection for oxide-based resistive random access memories

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO{sub 2}, TiO{sub 2}, Ta{sub 2}O{sub 5}, and Al{sub 2}O{sub 3}, to define a materials selection process. O vacancies have the lowest defect formation energy in the O-poor limit and dominate the processes. A band diagram defines the operating Fermi energy and O chemical potential range. It is shown how the scavenger metal can be used to vary the O vacancy formation energy, via controlling the O chemical potential, and the mean Fermi energy. The high endurance of Ta{sub 2}O{sub 5} RRAM is related to its more stable amorphous phase and the adaptive lattice rearrangements of its O vacancy.
Authors:
;  [1]
  1. Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)
Publication Date:
OSTI Identifier:
22402443
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; AMORPHOUS STATE; DEFECTS; ELECTRONIC STRUCTURE; FORMATION HEAT; HAFNIUM OXIDES; OXYGEN; RANDOMNESS; TANTALUM OXIDES; TITANIUM OXIDES; VACANCIES