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Title: Superior carrier confinement in InAlN/InGaN/AlGaN double heterostructures grown by metal-organic chemical vapor deposition

InAlN/InGaN/AlGaN double heterostructures were grown and characterized. Temperature-dependent Hall measurements show that the two-dimensional electron gas has a steady density over the entire temperature range tested and a superior transport property compared with the traditional InAlN/GaN single heterostructure at elevated temperatures. The improved performance was attributed to the back barrier, which enhanced the carrier confinement and prevented electrons from spilling into the buffer. In addition, the room-temperature electron mobility of the double heterostructure was 1293 cm{sup 2}/Vs, which is the highest reported for an InGaN-channel heterostructure.
Authors:
; ; ;  [1]
  1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)
Publication Date:
OSTI Identifier:
22402440
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDES; HALL EFFECT; INDIUM COMPOUNDS; ORGANOMETALLIC COMPOUNDS; TEMPERATURE RANGE 0273-0400 K