Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903234· OSTI ID:22402438

Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M. ^[1]; Koizumi, A.; Fujiwara, Y. ^[2]; Takemura, Y.; Murahashi, K.; Ohtsuka, K. ^[3]; Furuta, S. ^[4]

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1. Osaka Municipal Technical Research Institute, 1-6-50 Morinomiya, Joto-ku, Osaka 536-8553 (Japan)
2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)
3. Okuno Chemical Industries Co., Ltd., 2-1-25 Hanaten-nishi, Joto-ku, Osaka 536-0011 (Japan)
4. Tomoe Works Co., Ltd., 7-13 Tsurumachi, Amagasaki 660-0092 (Japan)

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

• OSTI ID: 22402438
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ELECTRODES
EUROPIUM
GALLIUM NITRIDES
INDIUM
INDIUM COMPLEXES
LIGHT EMITTING DIODES
MIXTURES
SCREEN PRINTING
SINTERING
SUBSTRATES
TIN COMPLEXES
TIN OXIDES
VISIBLE RADIATION