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Title: Origin of traps and charge transport mechanism in hafnia

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO{sub 2}. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25‚ÄČeV in HfO{sub 2} was determined based on the charge transport experiments.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
  3. Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan (China)
  4. National Chiao Tung University, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22402418
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE TRANSPORT; HAFNIUM OXIDES; OXYGEN; PHONONS; TRAPS; TUNNEL EFFECT; VACANCIES