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Title: Hanle-effect measurements of spin injection from Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}-contacts into degenerately doped Ge channels on Si

We report electrical spin injection and detection in degenerately doped n-type Ge channels using Mn{sub 5}Ge{sub 3}C{sub 0.8}/Al{sub 2}O{sub 3}/n{sup +}-Ge tunneling contacts for spin injection and detection. The whole structure is integrated on a Si wafer for complementary metal-oxide-semiconductor compatibility. From three-terminal Hanle-effect measurements, we observe a spin accumulation up to 10 K. The spin lifetime is extracted to be 38 ps at T = 4 K using Lorentzian fitting, and the spin diffusion length is estimated to be 367 nm due to the high diffusion coefficient of the highly doped Ge channel.
Authors:
; ; ;  [1] ; ; ;  [2] ;  [3] ; ;  [4]
  1. Institut für Halbleitertechnik (IHT), Universität Stuttgart, Pfaffenwaldring 47, Stuttgart 70569 (Germany)
  2. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States)
  3. Physikalisches Institut, Karlsruhe Institute of Technology, Wolfgang-Gaede-Str. 1, Karlsruhe 76131 (Germany)
  4. Dpto. Física Aplicada, E. I. Industrial, Universidad de Vigo, Vigo (Spain)
Publication Date:
OSTI Identifier:
22402412
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CARBON COMPOUNDS; DIFFUSION LENGTH; DOPED MATERIALS; GERMANIUM; GERMANIUM COMPOUNDS; MANGANESE COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SPIN; TUNNEL EFFECT