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Title: Passivation effects in B doped self-assembled Si nanocrystals

Doping of semiconductor nanocrystals has enabled their widespread technological application in optoelectronics and micro/nano-electronics. In this work, boron-doped self-assembled silicon nanocrystal samples have been grown and characterised using Electron Spin Resonance and photoluminescence spectroscopy. The passivation effects of boron on the interface dangling bonds have been investigated. Addition of boron dopants is found to compensate the active dangling bonds at the interface, and this is confirmed by an increase in photoluminescence intensity. Further addition of dopants is found to reduce the photoluminescence intensity by decreasing the minority carrier lifetime as a result of the increased number of non-radiative processes.
Authors:
; ; ; ; ; ; ; ;  [1] ;  [2]
  1. Australian Centre for Advanced Photovoltaics, UNSW, Sydney 2052 (Australia)
  2. School of Physics, UNSW, Sydney 2052 (Australia)
Publication Date:
OSTI Identifier:
22402407
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON; CARRIER LIFETIME; DOPED MATERIALS; ELECTRON SPIN RESONANCE; INTERFACES; NANOSTRUCTURES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY