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Title: Role of interfacial layer on complementary resistive switching in the TiN/HfO{sub x}/TiN resistive memory device

The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfO{sub x}/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfO{sub x}/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfO{sub x} layer. In the TiN/HfO{sub x}/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfO{sub x} layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfO{sub x}/IL/TiN device.
Authors:
 [1] ;  [2] ; ; ;  [1] ; ;  [3]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. (Agency for Science, Technology and Research), Singapore 117685 (Singapore)
  3. Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685 (Singapore)
Publication Date:
OSTI Identifier:
22402405
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; HAFNIUM OXIDES; LAYERS; MEMORY DEVICES; OXIDATION; OXYGEN IONS; PLATINUM; TITANIUM NITRIDES