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Title: Effect of boron localized states on the conduction band transport in B{sub x}Ga{sub 1−x}P

We study the magnetotransport properties of an n-type (B,Ga)P:Te alloy and an n-type GaP:Te reference under hydrostatic pressure up to 17 kilobars in the temperature range from 1.5 to 300 K. The free carrier concentration and the mobility of the reference sample are almost independent of the applied hydrostatic pressure at room temperature. In contrast, the free carrier concentration as well as the mobility in the B{sub 0.012}Ga{sub 0.988}P:Te alloy increase by about 30% over the accessible pressure range. The observations are explained by assuming that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy. These boron states act as electron traps as well as efficient scatter centers. Applying hydrostatic pressure shifts the energetic positions of conduction band edge at the X-point (where the electron transport takes place) and of the boron states apart reducing the impact of boron on the electronic transport properties of the alloy.
Authors:
; ;  [1] ; ; ;  [2]
  1. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen (Germany)
  2. Department of Physics and Material Sciences Center, Phillips-Universität Marburg, Marburg (Germany)
Publication Date:
OSTI Identifier:
22402404
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALLOY SYSTEMS; BORON; BORON ADDITIONS; CARRIER MOBILITY; CHARGE CARRIERS; DOPED MATERIALS; ELECTRONIC STRUCTURE; GALLIUM BASE ALLOYS; GALLIUM PHOSPHIDES; TELLURIUM ADDITIONS