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Title: Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP{sub 1−x}Bi{sub x} dilute bismide with x ≤ 0.034

Contactless electroreflectance is applied to study the band gap (E{sub 0}) and spin-orbit splitting (Δ{sub SO}) in InP{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.034. The E{sub 0} transition shifts to longer wavelengths very significantly (−83 meV/% Bi), while the E{sub 0} + Δ{sub SO} transition shifts very weakly (−13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E{sub 0} and E{sub 0} + Δ{sub SO} transitions, obtained within ab-initio calculations, are −106 and −20 meV per % Bi, respectively, which is in a good agreement with experimental results.
Authors:
; ; ;  [1] ; ;  [2] ; ; ;  [3] ;  [3] ;  [4]
  1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
  2. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
  3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
  4. (Sweden)
Publication Date:
OSTI Identifier:
22402403
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH ADDITIONS; ELECTRONIC STRUCTURE; INDIUM ALLOYS; L-S COUPLING; PHOSPHORUS ADDITIONS