Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP{sub 1−x}Bi{sub x} dilute bismide with x ≤ 0.034

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903179· OSTI ID:22402403

Kopaczek, J.; Polak, M. P.; Scharoch, P. ^[1]; Birkett, M.; Veal, T. D. ^[2]; Wang, K.; Gu, Y.; Gong, Q. ^[3]; Wang, S. ^[3]

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1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
2. Stephenson Institute for Renewable Energy and Department of Physics, School of Physical Sciences, University of Liverpool, Liverpool L69 7ZF (United Kingdom)
3. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Contactless electroreflectance is applied to study the band gap (E{sub 0}) and spin-orbit splitting (Δ{sub SO}) in InP{sub 1−x}Bi{sub x} alloys with 0 < x ≤ 0.034. The E{sub 0} transition shifts to longer wavelengths very significantly (−83 meV/% Bi), while the E{sub 0} + Δ{sub SO} transition shifts very weakly (−13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E{sub 0} and E{sub 0} + Δ{sub SO} transitions, obtained within ab-initio calculations, are −106 and −20 meV per % Bi, respectively, which is in a good agreement with experimental results.

• OSTI ID: 22402403
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH ADDITIONS
ELECTRONIC STRUCTURE
INDIUM ALLOYS
L-S COUPLING
PHOSPHORUS ADDITIONS