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Title: Controlled bipolar doping in Cu{sub 3}N (100) thin films

We have fabricated insulating, p- and n-type Cu{sub 3}N(100) films on SrTiO{sub 3}(100) by plasma assisted molecular beam epitaxy. By controlling the Cu/N flux rate, p-type doping with 10{sup 18}–10{sup 20 }cm{sup −3} in Cu-poor condition and n-type doping with 10{sup 19}–10{sup 20 }cm{sup −3} in N-poor condition were obtained without introducing foreign species. Together with formation of insulating Cu{sub 3}N films with an optical absorption coefficient of ∼10{sup 5 }cm{sup −1} in the photon energy above ∼2.2 eV and an estimated indirect bandgap of ∼1.3 eV, the bipolar doping in Cu{sub 3}N films would be promising for solar energy conversion applications.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22402401
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; COPPER NITRIDES; DOPED MATERIALS; MOLECULAR BEAM EPITAXY; PHOTONS; SOLAR ENERGY CONVERSION; STRONTIUM TITANATES; THIN FILMS