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Title: Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

A series of B implantation experiments into initially amorphized and not fully recrystallized Si, i.e., into an existing a/c-Si bi-layer material, have been conducted. We varied B dose, energy, and temperature during implantation process itself. Significant B migration has been observed within c-Si part near the a/c-interface and near the end-of-range region before any activation annealing. We propose a general concept of local trapping sites as experimental probes of nanoscale reaction-diffusion processes. Here, the a/c-Si interface acts as a trap, and the process itself is explored as the migration and clustering of mobile BI point defects in nearby c-Si during implantation at temperatures from 77 to 573 K. We find that at room temperature—even at B concentrations as high as 1.6 atomic %, the key B-B pairing step requires diffusion lengths of several nm owing to a small, ∼0.1 eV, pairing energy barrier. Thus, in nanostructures doped by ion implantation, the implant distribution can be strongly influenced by thermal migration to nearby impurities, defects, and interfaces.
Authors:
 [1] ; ;  [2] ;  [3] ;  [4] ;  [5]
  1. Globalfoundries, Kapeldreef 75, B-3001 Leuven (Belgium)
  2. School of Electrical and Electronic Engineering, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU (United Kingdom)
  3. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and IKS, Department of Physics, KU Leuven, Leuven (Belgium)
  4. Surrey Ion Beam Centre, Nodus Laboratory, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
  5. Philips CFT, Prof. Holstlaan 4, 5656 AA Eindhoven (Netherlands)
Publication Date:
OSTI Identifier:
22402391
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON; DIFFUSION LENGTH; DOPED MATERIALS; LAYERS; NANOSTRUCTURES; PAIRING ENERGY; POINT DEFECTS; SILICON; TEMPERATURE RANGE 0273-0400 K