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Title: Phase-amplitude coupling characteristics in directly modulated quantum dot lasers

We present a semi-analytical model for studying the phase-amplitude coupling (α-factor) in quantum dot (QD) semiconductor lasers, which takes into account the influence of carrier populations in the excited state and in the two-dimensional carrier reservoir on the refractive index change. Calculations of the α-factor based on the amplified spontaneous emission method and on the “FM/AM” technique are both investigated. It is shown that the α-factor of a QD laser strongly depends on the energy separation between the ground state and the off-resonant states. Through band structure engineering, the α-factor can be reduced by enlarging this energy separation.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [4] ;  [1]
  1. Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 75634 Paris Cedex 13 (France)
  2. (France)
  3. (United States)
  4. Institut National des Sciences Appliquées, Université Européenne de Bretagne, 35708 Rennes Cedex 7 (France)
Publication Date:
OSTI Identifier:
22402388
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; EXCITED STATES; GROUND STATES; QUANTUM DOTS; REFRACTIVE INDEX; SEMICONDUCTOR LASERS