Phase-amplitude coupling characteristics in directly modulated quantum dot lasers

Journal Article · Mon Dec 01 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4903493· OSTI ID:22402388

Wang, C. ^[1]; Osiński, M. ^[1]; Even, J. ^[2]; Grillot, F. ^[1]

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1. Télécom ParisTech, Ecole Nationale Supérieure des Télécommunications, CNRS LTCI, 75634 Paris Cedex 13 (France)
2. Institut National des Sciences Appliquées, Université Européenne de Bretagne, 35708 Rennes Cedex 7 (France)

We present a semi-analytical model for studying the phase-amplitude coupling (α-factor) in quantum dot (QD) semiconductor lasers, which takes into account the influence of carrier populations in the excited state and in the two-dimensional carrier reservoir on the refractive index change. Calculations of the α-factor based on the amplified spontaneous emission method and on the “FM/AM” technique are both investigated. It is shown that the α-factor of a QD laser strongly depends on the energy separation between the ground state and the off-resonant states. Through band structure engineering, the α-factor can be reduced by enlarging this energy separation.

• OSTI ID: 22402388
• Journal Information: Applied Physics Letters, Vol. 105, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EXCITED STATES
GROUND STATES
QUANTUM DOTS
REFRACTIVE INDEX
SEMICONDUCTOR LASERS