Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Wallace, M. J.; Edwards, P. R.; Martin, R. W.; Kappers, M. J.; Oehler, F.; Oliver, R. A.; Humphreys, C. J.; Hopkins, M. A.; Sivaraya, S.; Allsopp, D. W. E.

doi:10.1063/1.4915628

Title: Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

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Abstract

In this paper, we present a combined cathodoluminescence (CL) and electron beam induced current (EBIC) study of the optical and electrical properties of InGaN light emitting diodes grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2 T), whereas in the other device, each barrier was grown in a two step process with the first few nanometers at a lower temperature (Q2T). It was found that in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2 T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.

Authors:

Wallace, M. J.; Edwards, P. R.; Martin, R. W. ^[1]; Kappers, M. J.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. ^[2]; Hopkins, M. A.; Sivaraya, S.; Allsopp, D. W. E. ^[3]

Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS (United Kingdom)
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom)

Publication Date:: Sat Mar 21 00:00:00 EDT 2015

OSTI Identifier:: 22399327

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CATHODOLUMINESCENCE; CORRELATIONS; ELECTRIC CONDUCTIVITY; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; QUANTUM WELLS; SCANNING ELECTRON MICROSCOPY; SIGNALS; TEMPERATURE DEPENDENCE

Citation Formats


                    Wallace, M. J., Edwards, P. R., Martin, R. W., Kappers, M. J., Oehler, F., Oliver, R. A., Humphreys, C. J., Hopkins, M. A., Sivaraya, S., and Allsopp, D. W. E. Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4915628.

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                    Wallace, M. J., Edwards, P. R., Martin, R. W., Kappers, M. J., Oehler, F., Oliver, R. A., Humphreys, C. J., Hopkins, M. A., Sivaraya, S., & Allsopp, D. W. E. Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes.  United States.  https://doi.org/10.1063/1.4915628

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                    Wallace, M. J., Edwards, P. R., Martin, R. W., Kappers, M. J., Oehler, F., Oliver, R. A., Humphreys, C. J., Hopkins, M. A., Sivaraya, S., and Allsopp, D. W. E. 2015.  
        "Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes".  United States.  https://doi.org/10.1063/1.4915628.

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@article{osti_22399327,

  title        = {Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes},

  author       = {Wallace, M. J. and Edwards, P. R. and Martin, R. W. and Kappers, M. J. and Oehler, F. and Oliver, R. A. and Humphreys, C. J. and Hopkins, M. A. and Sivaraya, S. and Allsopp, D. W. E.},

  abstractNote = {In this paper, we present a combined cathodoluminescence (CL) and electron beam induced current (EBIC) study of the optical and electrical properties of InGaN light emitting diodes grown using different active region growth methods. In one device, both the quantum wells and quantum barriers were deposited at their optimum temperatures (2 T), whereas in the other device, each barrier was grown in a two step process with the first few nanometers at a lower temperature (Q2T). It was found that in the Q2T sample, small micron scale domains of lower emission intensity correlate strongly to a lower EBIC signal, whereas in the 2 T sample which has a more uniform emission pattern and an anti-correlation exists between CL emission intensity and EBIC signal.},

  doi          = {10.1063/1.4915628},

  url          = {https://www.osti.gov/biblio/22399327},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 11,

  volume       = 117,

  place        = {United States},

  year         = {Sat Mar 21 00:00:00 EDT 2015},

  month        = {Sat Mar 21 00:00:00 EDT 2015}

}

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