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Title: Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells

Inhomogeneity in Al-rich AlGaN/AlN quantum wells is directly observed using our custom-built confocal microscopy photoluminescence (μ-PL) apparatus with a reflective system. The μ-PL system can reach the AlN bandgap in the deep ultra-violet spectral range with a spatial resolution of 1.8 μm. In addition, cathodoluminescence (CL) measurements with a higher spatial resolution of about 100 nm are performed. A comparison of the μ-PL and CL measurements reveals that inhomogeneities, which have different spatial distributions of a few- and sub-micron scales that are superimposed, play key roles in determining the optical properties.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)
  2. Attolight AG, EPFL Innovation Park, Building D, CH-1015 Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22399325
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; CATHODOLUMINESCENCE; COMPARATIVE EVALUATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM NITRIDES; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SPATIAL DISTRIBUTION; SPATIAL RESOLUTION