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Title: Temperature dependent van der Pauw-Hall measurements on sodium doped single crystalline cadmium telluride

In this report, results of the temperature dependent electrical conductivity measurements conducted on single crystalline cadmium telluride (CdTe), containing sodium (Na) impurities are presented and discussed. The electrical conductivity measurements were conducted using an apparatus that allowed the implementation of a standard van der Pauw-Hall effect technique through which the electrical resistivity, concentration of majority carriers, as well as the carrier mobility were determined for temperatures ranging between 24 K and 350 K. Over this temperature range, the electrical resistivity was observed to change by 7 orders of magnitude. Hall measurements showed that the hole concentration at 300 K was ∼3 × 10{sup 15 }cm{sup –3} and the hole mobility at the same temperature was ∼80 cm{sup 2}/V s. Measuring the concentration of holes as a function of the sample temperature enabled the estimation of the acceptor energy level with respect to the valence band maximum to be ∼60 meV. The same data also revealed the potential presence of a compensating donor level. Furthermore, the hole mobility was also analyzed over the entire temperature range and the data revealed that above 100 K, the carrier mobility was dominated by the scattering of holes from lattice vibrations.
Authors:
 [1]
  1. Micro and Nano Structure Technology, GE Global Research Center, Niskayuna, New York 12309 (United States)
Publication Date:
OSTI Identifier:
22399324
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CADMIUM TELLURIDES; CARRIER MOBILITY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; HALL EFFECT; HOLE MOBILITY; HOLES; LATTICE VIBRATIONS; MONOCRYSTALS; SODIUM; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K