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Title: Mechanism of β-FeSi{sub 2} precipitates growth-and-dissolution and pyramidal defects' formation during oxidation of Fe-contaminated silicon wafers

Fe-implanted Si-wafers have been oxidized at 900 °C and 1100 °C in order to investigate the behaviour of Fe atoms at the growing SiO{sub 2}/Si interface and the impact on the integrity of microelectronic devices of an involuntary Fe contamination before or during the oxidation process. As-implanted and oxidized wafers have been characterized using secondary ion mass spectroscopy, atom probe tomography, and high-resolution transmission electron microscopy. Experimental results were compared to calculated implantation profiles and simulated images. Successive steps of iron disilicide precipitation and oxidation were evidenced during the silicon oxidation process. The formation of characteristic pyramidal-shaped defects, at the SiO{sub 2}/Si interface, was notably found to correlate with the presence of β-FeSi{sub 2} precipitates. Taking into account the competitive oxidation of these precipitates and of the surrounding silicon matrix, dynamic mechanisms are proposed to model the observed microstructural evolution of the SiO{sub 2}/Si interface, during the growth of the silicon oxide layer.
Authors:
; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Aix Marseille Université, CNRS, IM2NP UMR 7334, bd Escadrille Normandie Niémen, F-13397 Marseille (France)
  2. ST MicroElectronics, 190 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset (France)
  3. Ion Beam Services, rue G. Imbert prolongée, Z.I. Peynier Rousset, F-13790 Rousset (France)
  4. Vegatec, 150 av. Célestin Coq, Z.I. Peynier Rousset, F-13106 Rousset (France)
Publication Date:
OSTI Identifier:
22399319
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; INTERFACES; ION MICROPROBE ANALYSIS; IRON SILICIDES; LAYERS; MASS SPECTROSCOPY; MATRIX MATERIALS; MICROSTRUCTURE; OXIDATION; PRECIPITATION; SILICON; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY