skip to main content

SciTech ConnectSciTech Connect

Title: Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

The growth mechanisms of high quality GaN thin films on 6H-SiC by sputtering were investigated by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). The XRD θ-2θ scans show that high quality (0002) oriented GaN was deposited on 6H-SiC by reactive magnetron sputtering. Pole figures obtained by 2D-XRD clarify that GaN thin films are dominated by (0002) oriented wurtzite GaN and (111) oriented zinc-blende GaN. A thin amorphous silicon oxide layer on SiC surfaces observed by STEM plays a critical role in terms of the orientation information transfer from the substrate to the GaN epilayer. The addition of H{sub 2} into Ar and/or N{sub 2} during sputtering can reduce the thickness of the amorphous layer. Moreover, adding 5% H{sub 2} into Ar can facilitate a phase transformation from amorphous to crystalline in the silicon oxide layer and eliminate the unwanted (33{sup ¯}02) orientation in the GaN thin film. Fiber texture GaN thin films can be grown by adding 10% H{sub 2} into N{sub 2} due to the complex reaction between H{sub 2} and N{sub 2}.
Authors:
 [1] ; ;  [1] ;  [2] ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)
  2. (Canada)
Publication Date:
OSTI Identifier:
22399318
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL GROWTH; CUBIC LATTICES; GALLIUM NITRIDES; HYDROGEN; INTERFACES; LAYERS; MAGNETRONS; ORIENTATION; PHASE TRANSFORMATIONS; SILICON CARBIDES; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES; TEXTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL SYSTEMS; X-RAY DIFFRACTION