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Title: Electrical and photovoltaic characteristics of MoS{sub 2}/Si p-n junctions

Bulk-like molybdenum disulfide (MoS{sub 2}) thin films were deposited on the surface of p-type Si substrates using dc magnetron sputtering technique and MoS{sub 2}/Si p-n junctions were formed. The vibrating modes of E{sup 1}{sub 2g} and A{sub 1g} were observed from the Raman spectrum of the MoS{sub 2} films. The current density versus voltage (J-V) characteristics of the junction were investigated. A typical J-V rectifying effect with a turn-on voltage of 0.2 V was shown. In different voltage range, the electrical transporting of the junction was dominated by diffusion current and recombination current, respectively. Under the light illumination of 15 mW cm{sup −2}, the p-n junction exhibited obvious photovoltaic characteristics with a short-circuit current density of 3.2 mA cm{sup −2} and open-circuit voltage of 0.14 V. The fill factor and energy conversion efficiency were 42.4% and 1.3%, respectively. According to the determination of the Fermi-energy level (∼4.65 eV) and energy-band gap (∼1.45 eV) of the MoS{sub 2} films by capacitance-voltage curve and ultraviolet-visible transmission spectra, the mechanisms of the electrical and photovoltaic characteristics were discussed in terms of the energy-band structure of the MoS{sub 2}/Si p-n junctions. The results hold the promise for the integration of MoS{sub 2} thin films with commercially available Si-based electronics in high-efficient photovoltaicmore » devices.« less
Authors:
; ; ; ;  [1] ; ; ; ;  [2]
  1. College of Science, China University of Petroleum, Qingdao, Shandong 266580 (China)
  2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
Publication Date:
OSTI Identifier:
22399316
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; CURRENT DENSITY; DIFFUSION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY CONVERSION; ENERGY LEVELS; EV RANGE; FILL FACTORS; ILLUMINANCE; MOLYBDENUM SULFIDES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; RAMAN SPECTRA; RECOMBINATION; SILICON; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; ULTRAVIOLET RADIATION; VISIBLE RADIATION