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Title: Tuning negative differential resistance in single-atomic layer boron-silicon sheets

Using density functional theory and nonequilibrium Green's function formalism for quantum transport calculation, we have quantified the ballistic transport properties along different directions in two-dimensional boron-silicon (B-Si) compounds, as well as the current response to bias voltage. The conductance of the most B-Si devices is higher than the conductance of one-atom-thick boron and silicene. Furthermore, the negative differential resistance phenomenon can be found at certain B-Si stoichiometric composition, and it occurs at various bias voltages. Also, the peak-to-valley ratio is sensitive to the B-Si composition and dependent of the direction considered for B-Si monolayers. The present findings could be helpful for applications of the single-atomic layer B-Si sheets in the field of semiconductor devices or low-dimensional electronic devices.
Authors:
;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. School of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22399312
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; BORON; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; GREEN FUNCTION; LAYERS; SEMICONDUCTOR DEVICES; SHEETS; SILICENE; SILICON COMPOUNDS; TWO-DIMENSIONAL SYSTEMS