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Title: The efficacy of post porosity plasma protection against vacuum-ultraviolet damage in porous low-k materials

As of today, plasma damage remains as one of the main challenges to the reliable integration of porous low-k materials into microelectronic devices at the most aggressive node. One promising strategy to limit damage of porous low-k materials during plasma processing is an approach we refer to as post porosity plasma protection (P4). In this approach, the pores of the low-k material are filled with a sacrificial agent prior to any plasma treatment, greatly minimizing the total damage by limiting the physical interactions between plasma species and the low-k material. Interestingly, the contribution of the individual plasma species to the total plasma damage is not fully understood. In this study, we investigated the specific damaging effect of vacuum-ultraviolet (v-UV) photons on a highly porous, k = 2.0 low-k material and we assessed the P4 protective effect against them. It was found that the impact of the v-UV radiation varied depending upon the v-UV emission lines of the plasma. More importantly, we successfully demonstrated that the P4 process provides excellent protection against v-UV damage.
Authors:
;  [1] ; ; ;  [2]
  1. IBM Almaden Research Center, San Jose, California 95120 (United States)
  2. CNRS/LTM, CEA/LETI-Minatec, 38054 Grenoble Cedex 09 (France)
Publication Date:
OSTI Identifier:
22399300
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DAMAGE; FAR ULTRAVIOLET RADIATION; IRRADIATION; PHOTON EMISSION; PHOTONS; PHYSICAL RADIATION EFFECTS; PLASMA; POROSITY; POROUS MATERIALS