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Title: Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes

Abstract

Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes.

Authors:
; ; ; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
  2. Engineering Science Directorate, Army Research Office, Research Triangle Park, North Carolina 27703 (United States)
Publication Date:
OSTI Identifier:
22399297
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; COMPARATIVE EVALUATIONS; EFFICIENCY; GALLIUM NITRIDES; INTEGRALS; INTERFERENCE; LIGHT EMITTING DIODES; PERIODICITY; PHOTOLUMINESCENCE; QUANTUM WELLS; REFLECTION; SURFACES; THIN FILMS; VISIBLE RADIATION

Citation Formats

Guo, Wei, Kirste, Ronny, Bryan, Zachary, Bryan, Isaac, Collazo, Ramón, Sitar, Zlatko, and Gerhold, Michael. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. United States: N. p., 2015. Web. doi:10.1063/1.4915903.
Guo, Wei, Kirste, Ronny, Bryan, Zachary, Bryan, Isaac, Collazo, Ramón, Sitar, Zlatko, & Gerhold, Michael. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes. United States. https://doi.org/10.1063/1.4915903
Guo, Wei, Kirste, Ronny, Bryan, Zachary, Bryan, Isaac, Collazo, Ramón, Sitar, Zlatko, and Gerhold, Michael. 2015. "Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes". United States. https://doi.org/10.1063/1.4915903.
@article{osti_22399297,
title = {Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes},
author = {Guo, Wei and Kirste, Ronny and Bryan, Zachary and Bryan, Isaac and Collazo, Ramón and Sitar, Zlatko and Gerhold, Michael},
abstractNote = {Enhanced light extraction efficiency was demonstrated on nanostructure patterned GaN and AlGaN/AlN Multiple-Quantum-Well (MQW) structures using mass production techniques including natural lithography and interference lithography with feature size as small as 100 nm. Periodic nanostructures showed higher light extraction efficiency and modified emission profile compared to non-periodic structures based on integral reflection and angular-resolved transmission measurement. Light extraction mechanism of macroscopic and microscopic nanopatterning is discussed, and the advantage of using periodic nanostructure patterning is provided. An enhanced photoluminescence emission intensity was observed on nanostructure patterned AlGaN/AlN MQW compared to as-grown structure, demonstrating a large-scale and mass-producible pathway to higher light extraction efficiency in deep-ultra-violet light-emitting diodes.},
doi = {10.1063/1.4915903},
url = {https://www.osti.gov/biblio/22399297}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 117,
place = {United States},
year = {Sat Mar 21 00:00:00 EDT 2015},
month = {Sat Mar 21 00:00:00 EDT 2015}
}