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Title: Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.
Authors:
; ;  [1]
  1. Department of Engineering, Cambridge University, Cambridge CB2 1PZ (United Kingdom)
Publication Date:
OSTI Identifier:
22399287
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL BONDS; CRYSTAL DEFECTS; DIFFUSION BARRIERS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ARSENIDES; INTERFACES; METALS; NITRIDATION; OXIDES; PASSIVATION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES