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Title: Acceptors in ZnO

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.
Authors:
; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4]
  1. Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)
  2. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
  3. School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920 (United States)
  4. Voiland School of Chemical Engineering and Bioengineering, Washington State University, Pullman, Washington 99164-6515 (United States)
Publication Date:
OSTI Identifier:
22399283
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; COPPER; ELECTRIC CONDUCTIVITY; ELECTRON SPIN RESONANCE; EV RANGE; HOLES; IMPURITIES; LITHIUM; MOLYBDENUM OXIDES; NANOSTRUCTURES; NITROGEN; PHOTOLUMINESCENCE; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; VACANCIES; VALENCE; ZINC OXIDES