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Title: Transport properties of La{sub 2/3}Sr{sub 1/3}MnO{sub 3}/LaAlO{sub 3}/Pt tunnel junctions

Magnetotransport properties of La{sub 2/3}Sr{sub 1/3}MnO{sub 3}/LaAlO{sub 3}/Pt tunnel junctions have been thoroughly analyzed, as a function of temperature and magnetic field, to test the suitability of LaAlO{sub 3} for insulating barriers and spin injection processes. The insulating behavior of LaAlO{sub 3} maintained down to 1–2 nm (corresponding to 4–5 unit cells) renders this material useful as tunnel barrier. The temperature dependence of the junction resistance, R(T), down to 200 K confirms direct tunneling as the dominant conduction channel. The barrier parameters of the junctions, φ{sub 0} and s, are estimated using Simmons' model in the intermediate voltage range. The energy of the barrier was estimated to be φ{sub 0} ∼ 0.4 eV at room temperature. The dependence of R(T) and φ{sub 0} on the magnetic field shows an anisotropic tunneling magnetoresistance of ∼4% at low T when changing the direction of the magnetization with respect to the current flow.
Authors:
; ; ; ; ;  [1]
  1. Instituto de Ciencia de Materiales de Barcelona - CSIC, Campus UAB, Bellaterra 08193 (Spain)
Publication Date:
OSTI Identifier:
22399250
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINATES; ANISOTROPY; ELECTRIC POTENTIAL; EV RANGE; LANTHANUM COMPOUNDS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; MANGANATES; PLATINUM; SEMICONDUCTOR JUNCTIONS; SPIN; STRONTIUM COMPOUNDS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT