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Title: Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation.
Authors:
; ; ; ;  [1]
  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013 Taiwan (China)
Publication Date:
OSTI Identifier:
22399235
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; GALLIUM NITRIDES; INDIUM; INDIUM COMPOUNDS; INTERFACES; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; QUANTUM WELLS; SURFACES; TEMPERATURE DEPENDENCE; WAVELENGTHS