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Title: Si/Ge hetero-structure nanotube tunnel field effect transistor

We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at V{sub dd} = 1 V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60 mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when V{sub dd} is scaled down to 0.5 V.
Authors:
;  [1]
  1. Integrated Nanotechnology Lab, Computer Electrical Mathematical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22399219
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GERMANIUM; HALL EFFECT; HETEROJUNCTIONS; NANOTUBES; PERFORMANCE; RECOMBINATION; SILICON; TUNNEL EFFECT