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Title: Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (
Authors:
;  [1] ;  [2] ;  [3] ; ; ;  [2] ; ;  [4]
  1. Physical Sciences and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)
  2. Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)
  3. (ERI-N), Research Technoplaza, Nanyang Technological University, 50 Nanyang Drive, Singapore 637553 (Singapore)
  4. Stanford Synchrotron Radiation Light source (SLAC), National Accelerator Laboratory, Menlo Park, California 94025 (United States)
Publication Date:
OSTI Identifier:
22399207
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY BEAM DEPOSITION; FERMI LEVEL; FERROMAGNETISM; GADOLINIUM COMPOUNDS; LASER RADIATION; MAGNETORESISTANCE; OXYGEN; PRESSURE DEPENDENCE; PULSED IRRADIATION; SPIN; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ZINC OXIDES