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Title: Si doping effects on (In,Ga)N nanowires

Si doped (In,Ga)N nanowires (In content up to 0.4) are grown on Si(111) substrates by plasma-assisted molecular beam epitaxy. By increasing the Si doping level, coalescence between nanowires is reduced and a more uniform morphology is obtained. The Raman spectra from highly doped samples show a characteristic broad band in the optical phonon frequency range, which became more prominent at higher doping levels. This Raman band can be explained by plasmon-phonon scattering from a free electron gas with strong wave-vector nonconservation, providing evidence for successful n-type doping. The measured plasmon-phonon modes are explained by lineshape simulations taking into account the simultaneous contribution of both the charge-density fluctuation and the impurity induced Fröhlich scattering mechanisms. The according lineshape analysis allows for an estimate of the carrier concentration.
Authors:
; ; ;  [1]
  1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Publication Date:
OSTI Identifier:
22399177
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE DENSITY; COALESCENCE; COMPUTERIZED SIMULATION; CONCENTRATION RATIO; CRYSTAL STRUCTURE; DOPED MATERIALS; ELECTRON GAS; FLUCTUATIONS; GALLIUM NITRIDES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOWIRES; PHONONS; RAMAN SPECTRA; SCATTERING; SILICON; SUBSTRATES; VECTORS