Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence
Abstract
350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.
- Authors:
-
- Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DOAE Department, University of Valenciennes et du Hainaut Cambresis, Le Mont Houy, 59313 Valenciennes Cedex 9 (France)
- Institut National de la Recherche Scientifique - Energie Matériaux et Télécommunications (INRS-EMT), 10 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada)
- Institute of Electronics, Microelectronics and Nanotechnology (IEMN), UMR CNRS 8520, DHS Department, University of Lille1 Sciences and Technologies, 59652 Villeneuve d'Ascq Cedex (France)
- Publication Date:
- OSTI Identifier:
- 22399166
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 116; Journal Issue: 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; FINITE ELEMENT METHOD; GHZ RANGE; LAYERS; MICROSTRUCTURE; PERMITTIVITY; PEROVSKITE; POLYCRYSTALS; PZT; RELAXATION TIME; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION
Citation Formats
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., and Lasri, T. Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence. United States: N. p., 2014.
Web. doi:10.1063/1.4904514.
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., & Lasri, T. Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence. United States. https://doi.org/10.1063/1.4904514
Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr, Rémiens, D., Sama, N., and Lasri, T. 2014.
"Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence". United States. https://doi.org/10.1063/1.4904514.
@article{osti_22399166,
title = {Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence},
author = {Ponchel, F., E-mail: freddy.ponchel@univ-valenciennes.fr and Rémiens, D. and Sama, N. and Lasri, T.},
abstractNote = {350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.},
doi = {10.1063/1.4904514},
url = {https://www.osti.gov/biblio/22399166},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 24,
volume = 116,
place = {United States},
year = {Sun Dec 28 00:00:00 EST 2014},
month = {Sun Dec 28 00:00:00 EST 2014}
}