Erratum: “An analytical model for bio-electronic organic field-effect transistor sensors” [Appl. Phys. Lett. 103, 103301 (2013)]
- Dipartimento di Chimica, Università degli Studi di Bari “Aldo Moro,” Bari 70126 (Italy)
- Dipartimento Inter-Ateneo di Fisica “M. Merlin” dell'Università e del Politecnico di Bari, Bari 70126 (Italy)
No abstract prepared.
- OSTI ID:
- 22399147
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]
Publisher's Note: “Ultrafast and steady-state laser heating effects on electron relaxation and phonon coupling mechanisms in thin gold films” [Appl. Phys. Lett. 103, 211910 (2013)]
Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]
Journal Article
·
Mon Dec 23 00:00:00 EST 2013
· Applied Physics Letters
·
OSTI ID:22399147
+3 more
Publisher's Note: “Ultrafast and steady-state laser heating effects on electron relaxation and phonon coupling mechanisms in thin gold films” [Appl. Phys. Lett. 103, 211910 (2013)]
Journal Article
·
Mon Jan 06 00:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22399147
+2 more
Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105, 193509 (2014)]
Journal Article
·
Mon Jan 26 00:00:00 EST 2015
· Applied Physics Letters
·
OSTI ID:22399147
+3 more