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Title: Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]

No abstract prepared.
Authors:
; ;  [1] ;  [2]
  1. Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland)
  2. Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)
Publication Date:
OSTI Identifier:
22399144
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFINEMENT; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLES; LAYERS; QUANTUM MECHANICS