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Title: Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]

No abstract prepared.
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering and Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)
Publication Date:
OSTI Identifier:
22399143
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONFINEMENT; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLES; LAYERS; QUANTUM MECHANICS; TUNNEL EFFECT