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Title: Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.
Authors:
; ; ; ; ;  [1]
  1. Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)
Publication Date:
OSTI Identifier:
22399140
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DENSITY; DISLOCATIONS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM NITRIDES; HALL EFFECT; HYDRIDES; INTERFACES; LAYERS; ORGANOMETALLIC COMPOUNDS; SUBSTRATES; VAPOR PHASE EPITAXY