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Title: Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.
Authors:
; ; ; ;  [1]
  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
22399139
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; APERTURES; CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRONS; GALLIUM ARSENIDES; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INTERFACES; POLARIZATION; PROBABILITY; TRANSISTORS; TUNNEL EFFECT