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Title: The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires

The impact of the L-valley population on the transport properties of GaAs cylindrical nanowires (NWs) is analyzed by numerically calculating the electron mobility under the momentum relaxation time approximation. In spite of its low contribution to the electron mobility (even for high electron populations in small NWs), it is demonstrated to have a beneficial effect, since it significantly favours the Γ-valley mobility by screening the higher Γ-valley energy subbands.
Authors:
; ; ; ;  [1]
  1. Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071, Granada (Spain)
Publication Date:
OSTI Identifier:
22399112
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; APPROXIMATIONS; CYLINDRICAL CONFIGURATION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; NANOWIRES; RELAXATION TIME