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Title: H-tailored surface conductivity in narrow band gap In(AsN)

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.
Authors:
; ;  [1] ; ;  [2] ; ;  [3] ;  [4] ; ;  [5]
  1. School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD (United Kingdom)
  2. Dipartimento di Fisica, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)
  3. Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD (United Kingdom)
  4. Center for Materials and Microsystems—Fondazione Bruno Kessler, via Sommarive 18, 38123 Povo, Trento (Italy)
  5. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
Publication Date:
OSTI Identifier:
22399110
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; CONCENTRATION RATIO; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; INDIUM ARSENIDES; INDIUM NITRIDES; N-TYPE CONDUCTORS; SHEETS; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRAPS