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Title: Terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level

Terahertz emission by radiative transitions in semi-conductors via shallow impurity states is investigated. We report on the observation of terahertz photoluminescence from S.I.-GaAs by below gap excitation via EL2 level which is located at the center of band gap. In order to investigate the terahertz wave emission mechanisms, the emission spectra and temperature dependence of the emission intensity are evaluated. It is shown that intense terahertz emission from S.I.-GaAs over 120 K is observed due to the thermal recovery of photo-quenched EL2 meta-stable state, and that the emission peak frequency looks to be attributed to the shallow level energy in GaAs.
Authors:
; ; ;  [1]
  1. Department of Material Science and Engineering, Graduate School of Engineering, Tohoku University, Aramaki – Aza Aoba 6 – 6 – 11–1020, Sendai 980-8579 (Japan)
Publication Date:
OSTI Identifier:
22399108
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; EMISSION SPECTRA; ENERGY GAP; EXCITATION; GALLIUM ARSENIDES; IMPURITIES; METASTABLE STATES; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; THERMAL RECOVERY; THZ RANGE