Piezoresistive characterization of bottom-up, n-type silicon microwires undergoing bend deformation
The piezoresistance of silicon has been studied over the past few decades in order to characterize the material's unique electromechanical properties and investigate their wider applicability. While bulk and top-down (etched) micro- and nano-wires have been studied extensively, less work exists regarding bottom-up grown microwires. A facile method is presented for characterizing the piezoresistance of released, phosphorus-doped silicon microwires that have been grown, bottom-up, via a chemical vapour deposition, vapour-liquid-solid process. The method uses conductive tungsten probes to simultaneously make electrical measurements via direct ohmic contact and apply mechanical strain via bend deformation. These microwires display piezoresistive coefficients within an order of magnitude of those expected for bulk n-type silicon; however, they show an anomalous response at degenerate doping concentrations (∼10{sup 20 }cm{sup −3}) when compared to lower doping concentrations (∼10{sup 17 }cm{sup −3}), with a stronger piezoresistive coefficient exhibited for the more highly doped wires. This response is postulated to be due to the different growth mechanism of bottom-up microwires as compared to top-down.
- OSTI ID:
- 22399107
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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