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Title: Piezoresistive characterization of bottom-up, n-type silicon microwires undergoing bend deformation

The piezoresistance of silicon has been studied over the past few decades in order to characterize the material's unique electromechanical properties and investigate their wider applicability. While bulk and top-down (etched) micro- and nano-wires have been studied extensively, less work exists regarding bottom-up grown microwires. A facile method is presented for characterizing the piezoresistance of released, phosphorus-doped silicon microwires that have been grown, bottom-up, via a chemical vapour deposition, vapour-liquid-solid process. The method uses conductive tungsten probes to simultaneously make electrical measurements via direct ohmic contact and apply mechanical strain via bend deformation. These microwires display piezoresistive coefficients within an order of magnitude of those expected for bulk n-type silicon; however, they show an anomalous response at degenerate doping concentrations (∼10{sup 20 }cm{sup −3}) when compared to lower doping concentrations (∼10{sup 17 }cm{sup −3}), with a stronger piezoresistive coefficient exhibited for the more highly doped wires. This response is postulated to be due to the different growth mechanism of bottom-up microwires as compared to top-down.
Authors:
;  [1] ; ;  [2]
  1. Department of Electrical and Computer Engineering, University of Manitoba, Winnipeg R3T 5V6 (Canada)
  2. Department of Chemistry, University of Manitoba, Winnipeg R3T 2N2 (Canada)
Publication Date:
OSTI Identifier:
22399107
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DEFORMATION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; LIQUIDS; NANOWIRES; N-TYPE CONDUCTORS; PHOSPHORUS; PROBES; SILICON; SOLIDS; STRAINS; TUNGSTEN