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Title: Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 10{sup 13 }cm{sup −2} and 3 × 10{sup 13 }cm{sup −2} fluences not only introduces a trap with an E{sub V} + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at E{sub V} + 0.48 eV, E{sub V} + 2.42 eV, E{sub V} + 3.00 eV, and E{sub V} + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.
Authors:
; ;  [1] ; ;  [2] ; ; ; ;  [3]
  1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States)
  3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)
Publication Date:
OSTI Identifier:
22399104
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; AMMONIA; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; CRYSTAL LATTICES; DOPED MATERIALS; ENERGY GAP; EV RANGE; GALLIUM; GALLIUM NITRIDES; IRRADIATION; MEV RANGE; MOLECULAR BEAM EPITAXY; NITROGEN; PHYSICAL RADIATION EFFECTS; PROTONS; TRANSIENTS; TRAPS; VACANCIES