Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki; Sakaki, Hiroyuki

doi:10.1063/1.4905661

Title: Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

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Abstract

We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.

Authors:

Kawazu, Takuya; Noda, Takeshi; Sakuma, Yoshiki ^[1]; Sakaki, Hiroyuki ^[1]

National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

Publication Date:: Mon Jan 12 00:00:00 EST 2015

OSTI Identifier:: 22399103

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ASYMMETRY; CONTINUITY EQUATIONS; ELECTRIC CURRENTS; ELECTRON GAS; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; ILLUMINANCE; IRRADIATION; LASER RADIATION; NEAR INFRARED RADIATION; N-TYPE CONDUCTORS; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS

Citation Formats


                    Kawazu, Takuya, Noda, Takeshi, Sakuma, Yoshiki, Sakaki, Hiroyuki, and Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4905661.

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                    Kawazu, Takuya, Noda, Takeshi, Sakuma, Yoshiki, Sakaki, Hiroyuki, & Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511. Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination.  United States.  https://doi.org/10.1063/1.4905661

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                    Kawazu, Takuya, Noda, Takeshi, Sakuma, Yoshiki, Sakaki, Hiroyuki, and Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511. 2015.  
        "Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination".  United States.  https://doi.org/10.1063/1.4905661.

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@article{osti_22399103,

  title        = {Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination},

  author       = {Kawazu, Takuya and Noda, Takeshi and Sakuma, Yoshiki and Sakaki, Hiroyuki and Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511},

  abstractNote = {We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.},

  doi          = {10.1063/1.4905661},

  url          = {https://www.osti.gov/biblio/22399103},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 2,

  volume       = 106,

  place        = {United States},

  year         = {Mon Jan 12 00:00:00 EST 2015},

  month        = {Mon Jan 12 00:00:00 EST 2015}

}

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