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Title: Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination

We observe lateral currents induced in an n-AlGaAs/GaAs heterojunction channel of Hall bar geometry, when an asymmetric position of the Schottky metal gate is locally irradiated by a near-infrared laser beam. When the left side of the Schottky gate is illuminated with the laser, the lateral current flows from left to right in the two dimensional electron gas (2DEG) channel. In contrast, the right side illumination leads to the current from right to left. The magnitude of the lateral current is almost linearly dependent on the beam position, the current reaching its maximum for the beam at the edge of the Schottky gate. The experimental findings are well explained by a theory based on the current-continuity equation, where the lateral current in the 2DEG channel is driven by the photocurrent which vertically flows from the 2DEG to the Schottky gate.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22399103
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ASYMMETRY; CONTINUITY EQUATIONS; ELECTRIC CURRENTS; ELECTRON GAS; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; ILLUMINANCE; IRRADIATION; LASER RADIATION; NEAR INFRARED RADIATION; N-TYPE CONDUCTORS; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS