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Title: Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

We investigate GaN nanowire ensembles spontaneously formed in plasma-assisted molecular beam epitaxy by non-destructive low-energy electron diffraction (LEED) and x-ray photoelectron diffraction (XPD). We show that GaN nanowire ensembles prepared on AlN-buffered 6H-SiC(0001{sup ¯}) substrates with well-defined N polarity exhibit similar LEED intensity-voltage curves and angular distribution of photo-emitted electrons as N-polar free-standing GaN layers. Therefore, as in the case of GaN layers, LEED and XPD are found to be suitable techniques to assess the polarity of GaN nanowire ensembles on a macroscopic scale. The analysis of GaN nanowire ensembles prepared on bare Si(111) allows us to conclude that, on this non-polar substrate, the majority of nanowires is also N-polar.
Authors:
; ;  [1] ; ; ;  [2] ;  [3]
  1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague (Czech Republic)
  2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D–10117 Berlin (Germany)
  3. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)
Publication Date:
OSTI Identifier:
22399090
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ANGULAR DISTRIBUTION; DIAGRAMS; ELECTRIC POTENTIAL; ELECTRON DIFFRACTION; ELECTRONS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOEMISSION; PLASMA; SILICON CARBIDES; SUBSTRATES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY