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Title: Distinct photoresponse in graphene induced by laser irradiation

The graphene-based photodetector with tunable p-p{sup +}-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.
Authors:
; ; ;  [1] ;  [2] ; ; ;  [3] ;  [4] ;  [5]
  1. Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)
  2. Graphene Research and Characterization Center, Taizhou Sunano New Energy Co., Ltd., Taizhou 225300 (China)
  3. National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
  4. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083 (China)
  5. Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714 (China)
Publication Date:
OSTI Identifier:
22399088
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CONCENTRATION RATIO; CORRELATIONS; ELECTRIC CONTACTS; FABRICATION; GRAPHENE; IRRADIATION; LASER RADIATION; OPTOELECTRONIC DEVICES; PHOTOCURRENTS; PHOTOVOLTAIC EFFECT; SEMICONDUCTOR JUNCTIONS; THERMOELECTRIC CONVERSION