Distinct photoresponse in graphene induced by laser irradiation

Journal Article · Mon Jan 12 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906203· OSTI ID:22399088

Wang, Wen Hui; Nan, Hai Yan; Liu, Qi; Liang, Zheng ^[1]; Yu, Zhi Hao; Liu, Feng Yuan; Wang, Xin Ran ^[2]; Hu, Wei Da ^[3]; Zhang, Wei ^[4]

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1. Graphene Research and Characterization Center, Taizhou Sunano New Energy Co., Ltd., Taizhou 225300 (China)
2. National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)
3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083 (China)
4. Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714 (China)

The graphene-based photodetector with tunable p-p{sup +}-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.

• OSTI ID: 22399088
• Journal Information: Applied Physics Letters, Vol. 106, Issue 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
CORRELATIONS
ELECTRIC CONTACTS
FABRICATION
GRAPHENE
IRRADIATION
LASER RADIATION
OPTOELECTRONIC DEVICES
PHOTOCURRENTS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR JUNCTIONS
THERMOELECTRIC CONVERSION