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Title: Demonstration of a GaAs-based 1550-nm continuous wave photomixer

An Er:GaAs-based 1550-nm CW photomixer is demonstrated. The related mechanism is extrinsic photoconductivity with optical absorption between the localized deep levels created by the Er and the extended states above the conduction band edge of GaAs. With the power boost made possible by a fiber-coupled erbium-doped-fiber amplifier, the Er:GaAs photomixers, operating at 1550 nm, radiate THz power levels easily measured by a Golay cell, and display a power spectrum having a −3 dB roll-off frequency of 307 GHz. This corresponds to a photocarrier lifetime of 520 fs, in good agreement with a previous measurement of the bandwidth of the same material in a photoconductive switch.
Authors:
;  [1] ;  [2]
  1. Terahertz Sensor Laboratory, Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)
  2. Mound Laser and Photonics Center, Inc., Kettering, Ohio 45420 (United States)
Publication Date:
OSTI Identifier:
22399087
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; AMPLIFIERS; DOPED MATERIALS; ENERGY SPECTRA; ERBIUM; FIBERS; GALLIUM ARSENIDES; GHZ RANGE; PHOTOCONDUCTIVITY; SWITCHES