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Title: Electro-pumped whispering gallery mode ZnO microlaser array

By employing vapor-phase transport method, ZnO microrods are fabricated and directly assembled on p-GaN substrate to form a heterostructural microlaser array, which avoids of the relatively complicated etching process comparing previous work. Under applied forward bias, whispering gallery mode ZnO ultraviolet lasing is obtained from the as-fabricated heterostructural microlaser array. The device's electroluminescence originates from three distinct electron-hole recombination processes in the heterojunction interface, and whispering gallery mode ultraviolet lasing is obtained when the applied voltage is beyond the lasing threshold. This work may present a significant step towards future fabrication of a facile technique for micro/nanolasers.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [3]
  1. Peter Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing 210096 (China)
  2. (China)
  3. State Key Laboratory of Bioelectronics, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)
Publication Date:
OSTI Identifier:
22399081
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ETCHING; FABRICATION; GALLIUM NITRIDES; HETEROJUNCTIONS; HOLES; INTERFACES; P-TYPE CONDUCTORS; RECOMBINATION; SUBSTRATES; ULTRAVIOLET RADIATION; VAPORS; ZINC OXIDES