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Title: The origin of deep-level impurity transitions in hexagonal boron nitride

Deep ultraviolet photoluminescence (PL) emission spectroscopy has been employed to investigate the origin of the widely observed deep level impurity related donor-acceptor pair (DAP) transition with an emission peak near 4.1 eV in hexagonal boron nitride (h-BN). A set of h-BN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) under different ammonia (NH{sub 3}) flow rates to explore the role of nitrogen vacancies (V{sub N}) in the deep-level transitions. The emission intensity of the DAP transition near 4.1 eV was found to decrease exponentially with an increase of the NH{sub 3} flow rate employed during the MOCVD growth, implying that impurities involved are V{sub N}. The temperature-dependent PL spectra were measured from 10 K up to 800 K, which provided activation energies of ∼0.1 eV for the shallow impurity. Based on the measured energy level of the shallow impurity (∼0.1 eV) and previously estimated bandgap value of about 6.5 eV for h-BN, we deduce a value of ∼2.3 eV for the deep impurity involved in this DAP transition. The measured energy levels together with calculation results and formation energies of the impurities and defects in h-BN suggest that V{sub N} and carbon impurities occupying the nitrogen sites, respectively, are the most probable shallow donor and deep acceptormore » impurities involved in this DAP transition.« less
Authors:
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)
Publication Date:
OSTI Identifier:
22399080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; AMMONIA; BORON NITRIDES; CARBON; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; ENERGY LEVELS; EV RANGE; FLOW RATE; FORMATION HEAT; IMPURITIES; NITROGEN; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; ULTRAVIOLET RADIATION; VACANCIES