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Title: Acceptor impurity activation in III-nitride light emitting diodes

In this work, the role of the acceptor doping and the acceptor activation and its impact on the internal quantum efficiency (IQE) of a Gallium Nitride (GaN) based multi-quantum well light emitting diode is studied by microscopic simulation. Acceptor impurities in GaN are subject to a high activation energy which depends on the presence of proximate dopant atoms and the electric field. A combined model for the dopant ionization and activation barrier reduction has been developed and implemented in a semiconductor carrier transport simulator. By model calculations, we demonstrate the impact of the acceptor activation mechanisms on the decay of the IQE at high current densities, which is known as the efficiency droop. A major contributor to the droop is the electron leakage which is largely affected by the acceptor doping.
Authors:
;  [1]
  1. Department of Electrical Engineering, University of Kassel, 34121 Kassel (Germany)
Publication Date:
OSTI Identifier:
22399078
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ACTIVATION ENERGY; ATOMS; COMPUTERIZED SIMULATION; CURRENT DENSITY; DIFFUSION BARRIERS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDES; IMPURITIES; IONIZATION; LIGHT EMITTING DIODES; QUANTUM EFFICIENCY; QUANTUM WELLS; REDUCTION; SEMICONDUCTOR MATERIALS; SIMULATORS