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Title: Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks

This work evaluates the defects in HfZrO as a function of Zr addition into HfO{sub 2} and when the dielectric was subjected to a slot-plane-antenna (SPA) plasma treatment in a cyclic process to form TiN/HfZrO/SiON/Si gate stacks. The defect energy levels, estimated by temperature-dependent current-voltage measurements, suggest that Zr addition in HfO{sub 2} modifies the charge state of the oxygen vacancy formation, V{sup +}. The influence of electron affinity variation of Hf and Zr ions on the charged oxygen vacancy levels seems to have contributed to the increase in defect activation energy, E{sub a}, from 0.32‚ÄČeV to 0.4‚ÄČeV. The cyclic SPA plasma exposure further reduces the oxygen vacancy formation because of the film densification. When the dielectric was subjected to a constant voltage stress, the charge state oxygen vacancy formation changes to V{sup 2+} and improvement was eliminated. The trap assisted tunneling behavior, as observed by the stress induced leakage current characteristics, further supports the oxygen vacancy formation model.
Authors:
;  [1] ;  [2] ; ; ; ; ; ;  [3]
  1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102 (United States)
  2. Department of Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata (India)
  3. TEL Technology Center, America, LLC, NanoFab 300 South 255 Fuller Road, Suite 244, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22399064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; CHARGE STATES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY LEVELS; EV RANGE; FILMS; HAFNIUM OXIDES; LEAKAGE CURRENT; OXYGEN; PLASMA; STRESSES; TEMPERATURE DEPENDENCE; TITANIUM NITRIDES; TRAPS; TUNNEL EFFECT; VACANCIES; VANADIUM IONS; ZIRCONIUM IONS