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Title: Facile fabrication of a ultraviolet tunable MoS{sub 2}/p-Si junction diode

Chemical vapor deposition grown MoS{sub 2} single crystals were transferred onto the edge of a p-Si/SiO{sub 2} wafer, forming an abrupt heterogeneous junction diode at the MoS{sub 2}/p-Si interface. When electrically characterized as a field effect transistor, MoS{sub 2} exhibits an n-type response and can be doped in the presence of ultraviolet (UV) light. As a diode, it operates satisfactorily in air, but has higher currents in vacuum with a turn on voltage of ∼1.3 V and an on/off ratio of 20 at ±2 V. UV irradiation increases the diode on state current, decreases the turn-on voltage, and reduces the ideality parameter below 2. These changes are reversible after annealing in air as desorption of electron trapping species like O{sub 2}{sup −} and H{sub 2}O{sup −} are believed responsible for this effect. A circuit integrating this diode was used to rectify a 1 kHz signal with an efficiency of 12%. Its simple design, coupled with the ability to clip AC signals, sense UV light, and reversibly tune these diodes, makes them inexpensive, multifunctional, and usable as active or passive circuit components in complex electronics.
Authors:
;  [1] ; ; ;  [2]
  1. Department of Physics and Electronics, University of Puerto Rico Humacao, Humacao, Puerto Rico 00792 (United States)
  2. Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)
Publication Date:
OSTI Identifier:
22399061
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CHEMICAL VAPOR DEPOSITION; DESORPTION; DOPED MATERIALS; ELECTRIC POTENTIAL; ELECTRONS; FABRICATION; FIELD EFFECT TRANSISTORS; INTERFACES; IRRADIATION; JUNCTION DIODES; KHZ RANGE; MOLYBDENUM SULFIDES; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SILICON; SILICON OXIDES; TRAPPING; ULTRAVIOLET RADIATION